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https://doi.org/10.21256/zhaw-1992| Publication type: | Article in scientific journal |
| Type of review: | Peer review (publication) |
| Title: | Analysis of negative capacitance and self-heating in organic semiconductor devices |
| Authors: | Knapp, Evelyne Ruhstaller, Beat |
| DOI: | 10.21256/zhaw-1992 10.1063/1.4916981 |
| Published in: | Journal of Applied Physics |
| Volume(Issue): | 117 |
| Issue: | 13 |
| Issue Date: | Mar-2015 |
| Publisher / Ed. Institution: | American Institute of Physics |
| ISSN: | 0021-8979 1089-7550 |
| Language: | English |
| Subjects: | Organic semicondutor; Negative capacitance |
| Subject (DDC): | 621.3: Electrical, communications, control engineering |
| Abstract: | In admittance spectroscopy of organic semiconductor devices, negative capacitance values arise at low frequency and high voltages. This study aims at explaining the influence of self-heating on the frequency-dependent capacitance and demonstrates its impact on steady-state and dynamic experiments. Therefore, a one dimensional numerical drift-diffusion model extended by the heat equation is presented. We calculate the admittance with two approaches: a Fourier method that is applied to time domain data and a numerically efficient sinusoidal steady state analysis (S3A), which is based on the linearization of the equations around the operating point. The simulation results coincide well with the experimental findings from reference [H. Okumoto and T. Tsutsui, Appl. Phys. Express 7, 061601 (2014)] where the negative capacitance effect of an organic device becomes weaker with better cooling of the structure. Linking the frequency- and time-domain with the Fourier approach supports an effortless interpretation of the negative capacitance. Namely, we find that negative capacitance originates from self-heating induced current enhancement. |
| URI: | https://digitalcollection.zhaw.ch/handle/11475/6929 |
| Fulltext version: | Published version |
| License (according to publishing contract): | Licence according to publishing contract |
| Departement: | School of Engineering |
| Organisational Unit: | Institute of Computational Physics (ICP) |
| Appears in collections: | Publikationen School of Engineering |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2015_ruhb_Analysis_of_negative_capacitance.pdf | 1.07 MB | Adobe PDF |  View/Open |
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Knapp, E., & Ruhstaller, B. (2015). Analysis of negative capacitance and self-heating in organic semiconductor devices. Journal of Applied Physics, 117(13). https://doi.org/10.21256/zhaw-1992
Knapp, E. and Ruhstaller, B. (2015) ‘Analysis of negative capacitance and self-heating in organic semiconductor devices’, Journal of Applied Physics, 117(13). Available at: https://doi.org/10.21256/zhaw-1992.
E. Knapp and B. Ruhstaller, “Analysis of negative capacitance and self-heating in organic semiconductor devices,” Journal of Applied Physics, vol. 117, no. 13, Mar. 2015, doi: 10.21256/zhaw-1992.
KNAPP, Evelyne und Beat RUHSTALLER, 2015. Analysis of negative capacitance and self-heating in organic semiconductor devices. Journal of Applied Physics. März 2015. Bd. 117, Nr. 13. DOI 10.21256/zhaw-1992
Knapp, Evelyne, and Beat Ruhstaller. 2015. “Analysis of Negative Capacitance and Self-Heating in Organic Semiconductor Devices.” Journal of Applied Physics 117 (13). https://doi.org/10.21256/zhaw-1992.
Knapp, Evelyne, and Beat Ruhstaller. “Analysis of Negative Capacitance and Self-Heating in Organic Semiconductor Devices.” Journal of Applied Physics, vol. 117, no. 13, Mar. 2015, https://doi.org/10.21256/zhaw-1992.
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