Publication type: | Article in scientific journal |
Type of review: | Peer review (publication) |
Title: | Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters |
Authors: | Schumacher, Jürgen Altermatt, Pietro Heiser, Gernot Aberle, Armin |
DOI: | 10.1016/S0927-0248(00)00082-9 |
Published in: | Solar Energy Materials & Solar Cells |
Volume(Issue): | 65 |
Issue: | 1-4 |
Page(s): | 95 |
Pages to: | 103 |
Issue Date: | Jan-2001 |
Publisher / Ed. Institution: | Elsevier |
ISSN: | 0927-0248 |
Language: | English |
Subjects: | Band-gap narrowing; Heavily doped silicon; Degeneracy; Numerical simulation |
Subject (DDC): | 621.3: Electrical, communications, control engineering |
Abstract: | The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo. |
URI: | https://digitalcollection.zhaw.ch/handle/11475/11581 |
Fulltext version: | Published version |
License (according to publishing contract): | Licence according to publishing contract |
Departement: | School of Engineering |
Organisational Unit: | Institute of Computational Physics (ICP) |
Appears in collections: | Publikationen School of Engineering |
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Schumacher, J., Altermatt, P., Heiser, G., & Aberle, A. (2001). Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters. Solar Energy Materials & Solar Cells, 65(1-4), 95–103. https://doi.org/10.1016/S0927-0248(00)00082-9
Schumacher, J. et al. (2001) ‘Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters’, Solar Energy Materials & Solar Cells, 65(1-4), pp. 95–103. Available at: https://doi.org/10.1016/S0927-0248(00)00082-9.
J. Schumacher, P. Altermatt, G. Heiser, and A. Aberle, “Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters,” Solar Energy Materials & Solar Cells, vol. 65, no. 1-4, pp. 95–103, Jan. 2001, doi: 10.1016/S0927-0248(00)00082-9.
SCHUMACHER, Jürgen, Pietro ALTERMATT, Gernot HEISER und Armin ABERLE, 2001. Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters. Solar Energy Materials & Solar Cells. Januar 2001. Bd. 65, Nr. 1-4, S. 95–103. DOI 10.1016/S0927-0248(00)00082-9
Schumacher, Jürgen, Pietro Altermatt, Gernot Heiser, and Armin Aberle. 2001. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus-Doped Silicon Emitters.” Solar Energy Materials & Solar Cells 65 (1-4): 95–103. https://doi.org/10.1016/S0927-0248(00)00082-9.
Schumacher, Jürgen, et al. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus-Doped Silicon Emitters.” Solar Energy Materials & Solar Cells, vol. 65, no. 1-4, Jan. 2001, pp. 95–103, https://doi.org/10.1016/S0927-0248(00)00082-9.
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