Publication type: | Conference paper |
Type of review: | Editorial review |
Title: | Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters |
Authors: | Schumacher, Jürgen Altermatt, Pietro Heiser, Gernot Aberle, Armin |
Proceedings: | Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo |
Page(s): | 291 |
Pages to: | 292 |
Conference details: | 11th International PV Science and Engineering Conference, Sapporo, Japan, 20-24 September 1999 |
Issue Date: | 1999 |
Publisher / Ed. Institution: | Sapporo |
Language: | English |
Subject (DDC): | 621.3: Electrical, communications, control engineering |
URI: | https://digitalcollection.zhaw.ch/handle/11475/11711 |
Fulltext version: | Published version |
License (according to publishing contract): | Licence according to publishing contract |
Departement: | School of Engineering |
Organisational Unit: | Institute of Computational Physics (ICP) |
Appears in collections: | Publikationen School of Engineering |
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Schumacher, J., Altermatt, P., Heiser, G., & Aberle, A. (1999). Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters [Conference paper]. Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 291–292.
Schumacher, J. et al. (1999) ‘Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters’, in Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo. Sapporo, pp. 291–292.
J. Schumacher, P. Altermatt, G. Heiser, and A. Aberle, “Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters,” in Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 1999, pp. 291–292.
SCHUMACHER, Jürgen, Pietro ALTERMATT, Gernot HEISER und Armin ABERLE, 1999. Application of an improved band gap narrowing model to the numerical simulation of recombination properties of phosphorus doped silicon emitters. In: Technical digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo. Conference paper. Sapporo. 1999. S. 291–292
Schumacher, Jürgen, Pietro Altermatt, Gernot Heiser, and Armin Aberle. 1999. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus Doped Silicon Emitters.” Conference paper. In Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 291–92. Sapporo.
Schumacher, Jürgen, et al. “Application of an Improved Band Gap Narrowing Model to the Numerical Simulation of Recombination Properties of Phosphorus Doped Silicon Emitters.” Technical Digest - 11th International Photovoltaic Science and Engineering Conference : Sept. 20 - 24, 1999, Hokkaido, Japan, Royton Sapporo, 1999, pp. 291–92.
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