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  2. School of Engineering
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  4. Publikationen School of Engineering
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dc.contributor.authorLi, Wei-
dc.contributor.authorLiang, Yiran-
dc.contributor.authorYu, Dangmin-
dc.contributor.authorPeng, Lianmao-
dc.contributor.authorPernstich, Kurt-
dc.contributor.authorShen, Tian-
dc.contributor.authorHight Walker, A. R.-
dc.contributor.authorCheng, Guangjun-
dc.contributor.authorHacker, Christina A.-
dc.contributor.authorRichter, Curt A.-
dc.contributor.authorLi, Qiliang-
dc.contributor.authorGundlach, David J.-
dc.contributor.authorLiang, Xuelei-
dc.date.accessioned2018-10-30T15:05:21Z-
dc.date.available2018-10-30T15:05:21Z-
dc.date.issued2012-12-04-
dc.identifier.issn0003-6951de_CH
dc.identifier.issn1077-3118de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/12344-
dc.description.abstractWe report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition grown single layer graphene. Ultraviolet ozone treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl-methacrylate) and photoresist. Our control experiment shows that exposure times up to 10 min did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved for 25 min ultraviolet ozone treatment, while not significantly altering the electrical properties of the graphene channel region of devices.de_CH
dc.language.isoende_CH
dc.publisherAmerican Institute of Physicsde_CH
dc.relation.ispartofApplied Physics Lettersde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subjectPhysics - Materials Sciencede_CH
dc.subjectPhysics - Mesoscopic Systems and Quantum Hall Effectde_CH
dc.subject.ddc530: Physikde_CH
dc.titleUltraviolet/ozone treatment to reduce metal-graphene contact resistancede_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.1063/1.4804643de_CH
zhaw.funding.euNode_CH
zhaw.issue18de_CH
zhaw.originated.zhawYesde_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume102de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
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Li, W., Liang, Y., Yu, D., Peng, L., Pernstich, K., Shen, T., Hight Walker, A. R., Cheng, G., Hacker, C. A., Richter, C. A., Li, Q., Gundlach, D. J., & Liang, X. (2012). Ultraviolet/ozone treatment to reduce metal-graphene contact resistance. Applied Physics Letters, 102(18). https://doi.org/10.1063/1.4804643
Li, W. et al. (2012) ‘Ultraviolet/ozone treatment to reduce metal-graphene contact resistance’, Applied Physics Letters, 102(18). Available at: https://doi.org/10.1063/1.4804643.
W. Li et al., “Ultraviolet/ozone treatment to reduce metal-graphene contact resistance,” Applied Physics Letters, vol. 102, no. 18, Dec. 2012, doi: 10.1063/1.4804643.
LI, Wei, Yiran LIANG, Dangmin YU, Lianmao PENG, Kurt PERNSTICH, Tian SHEN, A. R. HIGHT WALKER, Guangjun CHENG, Christina A. HACKER, Curt A. RICHTER, Qiliang LI, David J. GUNDLACH und Xuelei LIANG, 2012. Ultraviolet/ozone treatment to reduce metal-graphene contact resistance. Applied Physics Letters. 4 Dezember 2012. Bd. 102, Nr. 18. DOI 10.1063/1.4804643
Li, Wei, Yiran Liang, Dangmin Yu, Lianmao Peng, Kurt Pernstich, Tian Shen, A. R. Hight Walker, et al. 2012. “Ultraviolet/Ozone Treatment to Reduce Metal-Graphene Contact Resistance.” Applied Physics Letters 102 (18). https://doi.org/10.1063/1.4804643.
Li, Wei, et al. “Ultraviolet/Ozone Treatment to Reduce Metal-Graphene Contact Resistance.” Applied Physics Letters, vol. 102, no. 18, Dec. 2012, https://doi.org/10.1063/1.4804643.


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