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dc.contributor.authorHorzel, Jörg T.-
dc.contributor.authorShengzhao, Yuan-
dc.contributor.authorBay, Norbert-
dc.contributor.authorPassig, Michael-
dc.contributor.authorPysch, Damian-
dc.contributor.authorKühnlein, Holger-
dc.contributor.authorNussbaumer, Hartmut-
dc.contributor.authorVerlinden, Pierre-
dc.date.accessioned2018-11-23T09:13:54Z-
dc.date.available2018-11-23T09:13:54Z-
dc.date.issued2015-09-28-
dc.identifier.issn2156-3381de_CH
dc.identifier.issn2156-3403de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/13181-
dc.description.abstractUntil today, most industrial c-Si solar cells have been limited by front emitter and front metal contact properties. This study demonstrates that laser ablation and inline plating of nickel and copper followed by inline thermal annealing results in improved performance and reduced cost. Stable efficiencies exceeding 20.8% on p-type PERC CZ-Si solar cells have been independently confirmed by FhG-ISE CalLab. Average fill factors up to 80.8% have been demonstrated on large-area solar cells with a homogeneous emitter P surface concentration below 4 × 10 19 P/cm 3 . Reliable module performance according to the IEC61215 standard is reported.de_CH
dc.language.isoende_CH
dc.publisherIEEEde_CH
dc.relation.ispartofIEEE Journal of Photovoltaicsde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleIndustrial Si solar cells with Cu based plated contactsde_CH
dc.typeBeitrag in Magazin oder Zeitungde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitut für Energiesysteme und Fluid-Engineering (IEFE)de_CH
dc.identifier.doi10.1109/JPHOTOV.2015.2478067de_CH
zhaw.funding.euNode_CH
zhaw.issue6de_CH
zhaw.originated.zhawYesde_CH
zhaw.pages.end1600de_CH
zhaw.pages.start1595de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume5de_CH
zhaw.webfeedPhotovoltaikde_CH
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Horzel, J. T., Shengzhao, Y., Bay, N., Passig, M., Pysch, D., Kühnlein, H., Nussbaumer, H., & Verlinden, P. (2015). Industrial Si solar cells with Cu based plated contacts. IEEE Journal of Photovoltaics, 5(6), 1595–1600. https://doi.org/10.1109/JPHOTOV.2015.2478067
Horzel, J.T. et al. (2015) ‘Industrial Si solar cells with Cu based plated contacts’, IEEE Journal of Photovoltaics, 5(6), pp. 1595–1600. Available at: https://doi.org/10.1109/JPHOTOV.2015.2478067.
J. T. Horzel et al., “Industrial Si solar cells with Cu based plated contacts,” IEEE Journal of Photovoltaics, vol. 5, no. 6, pp. 1595–1600, Sep. 2015, doi: 10.1109/JPHOTOV.2015.2478067.
HORZEL, Jörg T., Yuan SHENGZHAO, Norbert BAY, Michael PASSIG, Damian PYSCH, Holger KÜHNLEIN, Hartmut NUSSBAUMER und Pierre VERLINDEN, 2015. Industrial Si solar cells with Cu based plated contacts. IEEE Journal of Photovoltaics. 28 September 2015. Bd. 5, Nr. 6, S. 1595–1600. DOI 10.1109/JPHOTOV.2015.2478067
Horzel, Jörg T., Yuan Shengzhao, Norbert Bay, Michael Passig, Damian Pysch, Holger Kühnlein, Hartmut Nussbaumer, and Pierre Verlinden. 2015. “Industrial Si Solar Cells with Cu Based Plated Contacts.” IEEE Journal of Photovoltaics 5 (6): 1595–1600. https://doi.org/10.1109/JPHOTOV.2015.2478067.
Horzel, Jörg T., et al. “Industrial Si Solar Cells with Cu Based Plated Contacts.” IEEE Journal of Photovoltaics, vol. 5, no. 6, Sept. 2015, pp. 1595–600, https://doi.org/10.1109/JPHOTOV.2015.2478067.


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