Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics

Gorshkov, Vyacheslav N.; Stretovych, Mykola O.; Semeniuk, Valerii F.; Kruglenko, Mikhail P.; Semeniuk, Nadiia I.; Styopkin, Victor I.; Gabovich, Alexander M.; Boiger, Gernot K.

doi:10.3390/nano13192715

Please use this identifier to cite or link to this item: https://doi.org/10.21256/zhaw-29018

Publication type:	Article in scientific journal
Type of review:	Peer review (publication)
Title:	Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics
Authors:	Gorshkov, Vyacheslav N. Stretovych, Mykola O. Semeniuk, Valerii F. Kruglenko, Mikhail P. Semeniuk, Nadiia I. Styopkin, Victor I. Gabovich, Alexander M. Boiger, Gernot K.
et. al:	No
DOI:	10.3390/nano13192715 10.21256/zhaw-29018
Published in:	Nanomaterials
Volume(Issue):	13
Issue:	19
Page(s):	2715
Issue Date:	6-Oct-2023
Publisher / Ed. Institution:	MDPI
ISSN:	2079-4991
Language:	English
Subjects:	Monte Carlo method; Black silicon; Helicon discharge; Ion plasma flow; Silicon wafer processing; Surface mass transfer
Subject (DDC):	621.3: Electrical, communications, control engineering
Abstract:	Ion-flow-stimulated roughening transition is a phenomenon that may prove useful in the hierarchical structuring of nanostructures. In this work, we have investigated theoretically and experimentally the surface texturing of single-crystal and multi-crystalline silicon wafers irradiated using ion-beam flows. In contrast to previous studies, ions had relatively low energies, whereas flow densities were high enough to induce a quasi-liquid state in the upper silicon layers. The resulting surface modifications reduced the wafer light reflectance to values characteristic of black silicon, widely used in solar energetics. Features of nanostructures on different faces of silicon single crystals were studied numerically based on the mesoscopic Monte Carlo model. We established that the formation of nano-pyramids, ridges, and twisting dune-like structures is due to the stimulated roughening transition effect. The aforementioned variety of modified surface morphologies arises due to the fact that the effects of stimulated surface diffusion of atoms and re-deposition of free atoms on the wafer surface from the near-surface region are manifested to different degrees on different Si faces. It is these two factors that determine the selection of the allowable "trajectories" (evolution paths) of the thermodynamic system along which its Helmholtz free energy, F, decreases, concomitant with an increase in the surface area of the wafer and the corresponding changes in its internal energy, U (dU>0), and entropy, S (dS>0), so that dF=dU - TdS<0, where T is the absolute temperature. The basic theoretical concepts developed were confirmed in experimental studies, the results of which showed that our method could produce, abundantly, black silicon wafers in an environmentally friendly manner compared to traditional chemical etching.
URI:	https://digitalcollection.zhaw.ch/handle/11475/29018
Fulltext version:	Published version
License (according to publishing contract):	CC BY 4.0: Attribution 4.0 International
Departement:	School of Engineering
Organisational Unit:	Institute of Computational Physics (ICP)
Published as part of the ZHAW project:	GeoCloud – Simulation Software for Cloud-based Digital Microstructure Design of New Fuel Cell Materials
Appears in collections:	Publikationen School of Engineering

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Gorshkov, V. N., Stretovych, M. O., Semeniuk, V. F., Kruglenko, M. P., Semeniuk, N. I., Styopkin, V. I., Gabovich, A. M., & Boiger, G. K. (2023). Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics. Nanomaterials, 13(19), 2715. https://doi.org/10.3390/nano13192715

Gorshkov, V.N. et al. (2023) ‘Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics’, Nanomaterials, 13(19), p. 2715. Available at: https://doi.org/10.3390/nano13192715.

V. N. Gorshkov et al., “Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics,” Nanomaterials, vol. 13, no. 19, p. 2715, Oct. 2023, doi: 10.3390/nano13192715.

GORSHKOV, Vyacheslav N., Mykola O. STRETOVYCH, Valerii F. SEMENIUK, Mikhail P. KRUGLENKO, Nadiia I. SEMENIUK, Victor I. STYOPKIN, Alexander M. GABOVICH und Gernot K. BOIGER, 2023. Hierarchical structuring of black silicon wafers by ion-flow-stimulated roughening transition : fundamentals and applications for photovoltaics. Nanomaterials. 6 Oktober 2023. Bd. 13, Nr. 19, S. 2715. DOI 10.3390/nano13192715

Gorshkov, Vyacheslav N., Mykola O. Stretovych, Valerii F. Semeniuk, Mikhail P. Kruglenko, Nadiia I. Semeniuk, Victor I. Styopkin, Alexander M. Gabovich, and Gernot K. Boiger. 2023. “Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition : Fundamentals and Applications for Photovoltaics.” Nanomaterials 13 (19): 2715. https://doi.org/10.3390/nano13192715.

Gorshkov, Vyacheslav N., et al. “Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition : Fundamentals and Applications for Photovoltaics.” Nanomaterials, vol. 13, no. 19, Oct. 2023, p. 2715, https://doi.org/10.3390/nano13192715.