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  2. School of Engineering
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dc.contributor.authorLanz, Thomas-
dc.contributor.authorBonmarin, Mathias-
dc.contributor.authorStuckelberger, Michael-
dc.contributor.authorSchlumpf, Christian-
dc.contributor.authorBallif, Christophe-
dc.contributor.authorRuhstaller, Beat-
dc.date.accessioned2018-04-10T15:10:55Z-
dc.date.available2018-04-10T15:10:55Z-
dc.date.issued2013-
dc.identifier.issn1077-260Xde_CH
dc.identifier.issn1558-4542de_CH
dc.identifier.urihttps://digitalcollection.zhaw.ch/handle/11475/5023-
dc.description.abstractWe present and validate a finite-element model for coupled charge and heat transport in monolithically interconnected thin-film solar modules. Using measured current-voltage ( I-V) and lock-in thermography (LIT) measurements of amorphous silicon minimodules, we experimentally validate our model. The entire module volume is represented by two planes (front and back electrodes) which are coupled in vertical direction using 1-D models, leading to a large reduction of the degrees of freedom in the numerical model and contributing to an efficient solution approach. As compared to 3-D models, the vertical coupling of the charge transport is represented by local temperature-dependent I-V curves. These can be obtained by drift-diffusion calculations, single-cell measurements or, as presented here, by an analytical solar cell diode model. Inhomogeneous heat sources such as Joule's heating in the electrodes lead to nonuniform temperature distributions. The explicit temperature dependence in the local I-V curve, therefore, mediates the feedback of the thermal transport on the local electrical cell characteristics. We employ measured I-V curves under partial illumination and analytical solutions for the potential distribution to validate this approach. Further, with LIT measurements of the same modules with and without artificially induced electrical shunts, we verify the computed temperature distributions.de_CH
dc.language.isoende_CH
dc.publisherIEEEde_CH
dc.relation.ispartofIEEE Journal of Selected Topics in Quantum Electronicsde_CH
dc.rightsLicence according to publishing contractde_CH
dc.subject.ddc621.3: Elektro-, Kommunikations-, Steuerungs- und Regelungstechnikde_CH
dc.titleElectrothermal finite-element modeling for defect characterization in thin-film silicon solar modulesde_CH
dc.typeBeitrag in wissenschaftlicher Zeitschriftde_CH
dcterms.typeTextde_CH
zhaw.departementSchool of Engineeringde_CH
zhaw.organisationalunitInstitute of Computational Physics (ICP)de_CH
dc.identifier.doi10.1109/JSTQE.2013.2250259de_CH
zhaw.funding.euNode_CH
zhaw.issue5de_CH
zhaw.originated.zhawYesde_CH
zhaw.pages.end8de_CH
zhaw.pages.start1de_CH
zhaw.publication.statuspublishedVersionde_CH
zhaw.volume19de_CH
zhaw.publication.reviewPeer review (Publikation)de_CH
zhaw.webfeedSensors and Measuring Systemsde_CH
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Lanz, T., Bonmarin, M., Stuckelberger, M., Schlumpf, C., Ballif, C., & Ruhstaller, B. (2013). Electrothermal finite-element modeling for defect characterization in thin-film silicon solar modules. IEEE Journal of Selected Topics in Quantum Electronics, 19(5), 1–8. https://doi.org/10.1109/JSTQE.2013.2250259
Lanz, T. et al. (2013) ‘Electrothermal finite-element modeling for defect characterization in thin-film silicon solar modules’, IEEE Journal of Selected Topics in Quantum Electronics, 19(5), pp. 1–8. Available at: https://doi.org/10.1109/JSTQE.2013.2250259.
T. Lanz, M. Bonmarin, M. Stuckelberger, C. Schlumpf, C. Ballif, and B. Ruhstaller, “Electrothermal finite-element modeling for defect characterization in thin-film silicon solar modules,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 19, no. 5, pp. 1–8, 2013, doi: 10.1109/JSTQE.2013.2250259.
LANZ, Thomas, Mathias BONMARIN, Michael STUCKELBERGER, Christian SCHLUMPF, Christophe BALLIF und Beat RUHSTALLER, 2013. Electrothermal finite-element modeling for defect characterization in thin-film silicon solar modules. IEEE Journal of Selected Topics in Quantum Electronics. 2013. Bd. 19, Nr. 5, S. 1–8. DOI 10.1109/JSTQE.2013.2250259
Lanz, Thomas, Mathias Bonmarin, Michael Stuckelberger, Christian Schlumpf, Christophe Ballif, and Beat Ruhstaller. 2013. “Electrothermal Finite-Element Modeling for Defect Characterization in Thin-Film Silicon Solar Modules.” IEEE Journal of Selected Topics in Quantum Electronics 19 (5): 1–8. https://doi.org/10.1109/JSTQE.2013.2250259.
Lanz, Thomas, et al. “Electrothermal Finite-Element Modeling for Defect Characterization in Thin-Film Silicon Solar Modules.” IEEE Journal of Selected Topics in Quantum Electronics, vol. 19, no. 5, 2013, pp. 1–8, https://doi.org/10.1109/JSTQE.2013.2250259.


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