The role of shallow traps in dynamic characterization of organic semiconductor devices

Knapp, Evelyne; Ruhstaller, Beat

doi:10.1063/1.4739303

Publication type:	Article in scientific journal
Type of review:	Peer review (publication)
Title:	The role of shallow traps in dynamic characterization of organic semiconductor devices
Authors:	Knapp, Evelyne Ruhstaller, Beat
DOI:	10.1063/1.4739303
Published in:	Journal of Applied Physics
Volume(Issue):	112
Issue:	2
Issue Date:	Jun-2012
Publisher / Ed. Institution:	American Institute of Physics
ISSN:	0021-8979 1089-7550
Language:	English
Subject (DDC):	621.3: Electrical, communications, control engineering
Abstract:	We present an analysis of charge mobility determination methods for the steady as well as the transient state and investigate shallow charge traps with respect to their dynamic behavior. We distinguish between fast and slow trap states in our numerical model corresponding to two characteristic regimes. The two regimes manifest themselves in both impedance spectroscopy and dark injection transient currents (DITC). Further we investigate the charge mobility obtained from dynamic simulations and relate it to the extracted charge mobility from steady-state current-voltage curves. To demonstrate the practical impact of these regimes, we apply our numerical model to the DITC that have commonly been used to determine the charge mobility in organic semiconductor devices. The obtained results from DITC studies strongly depend on the measurement conditions. Therefore we analyze the measurements of reference [Esward et al., J. Appl. Phys. 109, 093707 (2011)] and reproduce the effects of varying pulse off-times on the transient current qualitatively. Thus, our simulations are able to explain the experimental observations with the help of relaxation effects due to shallow traps.
URI:	https://digitalcollection.zhaw.ch/handle/11475/6931
Fulltext version:	Published version
License (according to publishing contract):	Licence according to publishing contract
Departement:	School of Engineering
Organisational Unit:	Institute of Computational Physics (ICP)
Appears in collections:	Publikationen School of Engineering

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Knapp, E., & Ruhstaller, B. (2012). The role of shallow traps in dynamic characterization of organic semiconductor devices. Journal of Applied Physics, 112(2). https://doi.org/10.1063/1.4739303

Knapp, E. and Ruhstaller, B. (2012) ‘The role of shallow traps in dynamic characterization of organic semiconductor devices’, Journal of Applied Physics, 112(2). Available at: https://doi.org/10.1063/1.4739303.

E. Knapp and B. Ruhstaller, “The role of shallow traps in dynamic characterization of organic semiconductor devices,” Journal of Applied Physics, vol. 112, no. 2, Jun. 2012, doi: 10.1063/1.4739303.

KNAPP, Evelyne und Beat RUHSTALLER, 2012. The role of shallow traps in dynamic characterization of organic semiconductor devices. Journal of Applied Physics. Juni 2012. Bd. 112, Nr. 2. DOI 10.1063/1.4739303

Knapp, Evelyne, and Beat Ruhstaller. 2012. “The Role of Shallow Traps in Dynamic Characterization of Organic Semiconductor Devices.” Journal of Applied Physics 112 (2). https://doi.org/10.1063/1.4739303.

Knapp, Evelyne, and Beat Ruhstaller. “The Role of Shallow Traps in Dynamic Characterization of Organic Semiconductor Devices.” Journal of Applied Physics, vol. 112, no. 2, June 2012, https://doi.org/10.1063/1.4739303.